Abstract

In this paper, 1200 V-class planar SiC MOSFETs are investigated by experiment and finite-element simulation under single-pulse short circuit stress. Experimental results show that the failure mode of the device is gate damage. The simulations obtain the temperature, current and voltage changes inside the devices under short circuit conditions. The effect of various circuit characteristics for short-circuit behavior is presented. The simulation results reveal the relationship between total loss, switching speed and short-circuit capability of device.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.