Abstract
In this paper, 1200 V-class planar SiC MOSFETs are investigated by experiment and finite-element simulation under single-pulse short circuit stress. Experimental results show that the failure mode of the device is gate damage. The simulations obtain the temperature, current and voltage changes inside the devices under short circuit conditions. The effect of various circuit characteristics for short-circuit behavior is presented. The simulation results reveal the relationship between total loss, switching speed and short-circuit capability of device.
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