Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate

Abstract

The Schottky source/drain metal-oxide-semiconductor field-effect transistor (MOSFET) has potential for scaling to the nanometer regime, because low electrode resistances with very shallow extension can be realized using metal source/drain. In this study, very short channel n- and p-type Schottky source/drain MOSFETs with silicon-on-insulator (SOI) structure were analyzed theoretically, and n-type devices were demonstrated experimentally. It was shown theoretically that a drivability of the Schottky source/drain MOSFET comparable to that of conventional MOSFETs can be realized with a low Schottky barrier height. The short-channel effect can be suppressed even with a 15-nm-long channel at tOX = 1 nm and tSOI = 3 nm. The room-temperature operation of sub-50-nm n-type ErSi2 Schottky source/drain MOSFETs on a separation by implanted oxygen (SIMOX) substrate was demonstrated.