Abstract
Introducing dopant elements into graphene is a crucial process for creating bandgaps, which will have significant importance in developing nanoelectronic devices in the future. In this study, we provide an analysis of the electrical and carrier mobility properties of graphene doped with BN in ratios of 1 %, 3 %, and 5 %, graphene 95 %, ZnO-3 %, and BN2 %, graphene-95 %, Al2O3-3 % and BN-2 %, graphene-95 %, TiO2-3 % and BN-2 % by using a sintering process. Upon analyzing the band structure, it was determined that the mentioned materials demonstrate a bandgap in graphene. The resistivity values for fabricated graphene materials doped with different nanoparticles are estimated using the Source-meter Unit (SMU) at room temperature (25°C), 100°C and 200°C. The conductivity of graphene is 8.93E+07 Ω−1cm−1 and reduced gradually with the doping percentages. The resistivity of graphene is measured at 1.12 E-08 Ω.cmand increases with the doping percentages, and carrier mobility is measured to be 9239 cm2V−1s−1 and gradually reduced with the doping percentages. The temperature-dependent conductivity is determined using electrical conductivity under the constant relaxation time approximation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
