Abstract
Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the systems developed. The evaluation of HPEM (High Power Electromagnetics) has been mainly carried out in the system level, and the case of failure analysis on the device is very rare.If the electronic components (semiconductor) are exposed to HPEM, the semiconductor will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductor is vulnerable to external stress factor such as the coupled electromagnetic pulse. By injecting Damped Sinusoidal Pulse to the semiconductor devices, were observed the increase of leakage current and the physical damage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
