Abstract
A theoretical study of both buried and surface strained n-channel Si/SiGe MOSFETs is presented. The analysis focused on the possible benefits of the scaling on the AC and noise performance of the transistor for low-power applications using a 2D hydrodynamic model. The impedance field method was adopted to self-consistently obtain the current noise at the device's terminals. The minimum noise figure (NF min ) dependence with the drain current was explained in terms of carrier transport in the channel. It was found that a pure reduction of the transistor's gate length can be detrimental for subthreshold operation, but would lead to lower values of NF min for medium and high current levels. Buried channel devices consistently showed higher values of the subthreshold slope and NF min than the surface channel ones.
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