Analysis of residual stress around a Berkovich nano-indentation by micro-Raman spectroscopy

Lulu Ma,Huadan Xing,Qi Ding,Wei Qiu,Yuetao Han,Qiu Li

doi:10.1063/1.5080179

Lulu Ma, Huadan Xing + Show 4 more

Open Access

https://doi.org/10.1063/1.5080179

Copy DOI

Abstract

Nano-indentation is a destructive measurement that introduces non-uniform residual stress around each nano-indentation. Herein, the residual stress distribution around a Berkovich nano-indentation on (001)- and (111)-plane silicon was studied by micro-Raman mapping. All of the in-plane stress state components around the indentation were obtained specifically for the (001)- and (111)-plane silicon based on the expanding cavity model and the Raman-mechanical relationship. Calculating the distribution regularity of the residual stress, the effect of different crystal planes and crystal orientations was further analyzed. Finally, the stress near the vertex of the indentation was revised owing to the crack.

Highlights

In this study, based on Yoffe’s expanding cavity model, the residual stress fields around Berkovich nano-indentations on C-Si were investigated by micro-Raman spectroscopy (MRS), yielding the spatial distributions of different stress components
According to the three-dimensional indentation images (insets of Figs. 2(a) and 2(b)), the swelling around the indentation indicates the generation of pile-up, which introduces a residual stress on the C-Si surfaces
The relationship between the Raman wavenumber and the stress components can be achieved by combining elastic theory with lattice dynamics, which is dissimilar to the differences of both the measured crystal plane and the measured stress state

Summary

Introduction

In this study, based on Yoffe’s expanding cavity model, the residual stress fields around Berkovich nano-indentations on C-Si were investigated by MRS, yielding the spatial distributions of different stress components. The wavenumber distribution on the (001) plane of the C-Si sample was relatively symmetric on the left and right sides, while the bottom area of indentation exhibited a distribution that was quite different.

Results

Conclusion