Abstract
Remote Coulomb Scattering (RCS) limited mobility in CeO2 capped La2O3 high-k MOSFETs was studied. The RCS mobility was calculated by quantum mechanical calculations. Experimental mobility data has been measured from nMOSFETs with ultrathin gate oxide with thickness of 1.5nm, and has been compared to the calculated RCS mobility. The result shows that the mobility degradation in CeO2 / La2O3 gate stack MOSFETs might be due to the RCS.
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