Abstract
The effects of random doping and random oxide thickness fluctuations in ultrasmall semiconductor devices are analyzed by using self-consistent Poisson-Schrodinger computations. A very fast technique based on linearization of the transport equations is presented for the computation of threshold voltage fluctuations. This technique is computationally much more efficient than the traditional Monte-Carlo approach and yields information on the sensitivity of threshold voltage fluctuations to the locations of doping and oxide thickness fluctuations. Hence, it can be used in the design of fluctuation resistant structures of semiconductor devices. Sample simulation results obtained by using our linearization technique are reported and compared with those obtained by using the Monte-Carlo technique.
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