Abstract
In this paper, we analyse for the first time the effectiveness of the quasi-double gate (QDG) method for performance prediction of short channel double gate (DG) silicon-on-insulator metal–oxide–semiconductor field-effect transistors (MOSFETs) over the entire operating region. An analytical model has been developed to explain the abnormally low values (≪60 mV/decade) of subthreshold slope that are obtained in QDG devices. We extract the low field mobility (μo), subthreshold slope (S), threshold voltage (Vth), transconductance-to-drain current ratio (gm/Ids) and peak transconductance (gm)max in linear and saturation regions for deep submicron QDG devices. We demonstrate that the QDG method can accurately predict gm/Ids, (gm)max and μo values for a deep submicron real DG device in the linear and strong inversion regions.
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