Abstract
We present numerical and analytical studies of the crossover between weak antilocalization and weak localization in monolayer graphene and their influence on thermopower. By the use of the recursive Green's function method, we find that these quantum corrections result in an enhancement of thermopower, which can be observed in the resulting magnetic field dependence. This magneto thermopower strongly depends on the size and strength of the impurities as well as on the back gate voltage of the system and the impurity concentration. We show in detail the crossover of these localization effects with these parameters. Using the disorder parameters of the numerical calculation, we find quantitative agreement with the analytical calculations.
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