Abstract
A scattering parameter-based homogeneous distributed-line model with arbitrary initial and boundary conditions is proposed and its implementation in a general-purpose circuit simulator supporting user functions is described. Using a GaAs 0.5- mu m MESFET technology, the chip delays in very high-speed VLSI circuits are calculated. The performance requirements of transistors for high-density integration and for long-distance interconnection drivers are discussed with respect to properties of lossy and lossless interconnection lines. The evaluation of chip delays shows that sub-100-ps VLSI circuits (gate count beyond 10/sup 5/) should involve: (1) complementary logic gates using transistors with transconductance of 1-2.5 S/mm; and (2) high T/sub c/ superconducting long-distance interconnection lines driven by bipolar circuits with transconductance of 2.5 S/mm, unless such long lines can be overcome by new chip architectures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.