Abstract
Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.
Highlights
Copper indium gallium diselenide (CIGS) thin films have exhibited widespread photovoltaic (PV) applications due to their tunable bandgap and high absorption coefficient [1].The devices can be fabricated with processes leading to very high efficiency, such as the conventional three stage process, or by processes that can be more implemented industrially, such as a single stage process, which can fundamentally be performed at higher deposition rate and lower cost [2]
To investigate the feasibility and conditions required for post-deposition recrystallization, CIGS films deposited at 350 ◦ C were recrystallized at various temperatures under InBr3 vapor treatment
A process based on a similar concept, but replacing the group cadmium telluride (CdTe)/CdCl2 with CIGS/InBr3, was studied
Summary
Copper indium gallium diselenide (CIGS) thin films have exhibited widespread photovoltaic (PV) applications due to their tunable bandgap and high absorption coefficient [1].The devices can be fabricated with processes leading to very high efficiency, such as the conventional three stage process, or by processes that can be more implemented industrially, such as a single stage process, which can fundamentally be performed at higher deposition rate and lower cost [2]. Powerful post-deposition treatments have already been applied to other PV technologies, such as cadmium telluride (CdTe), by heating CdTe in the presence of CdCl2 , resulting in the recrystallization of CdTe [3,4,5]. It would be of interest to develop such a process for CIGS, allowing post-deposition treatment to recrystallize the thin films with the goal of enhancing the semiconductor quality [6]. The resulting films were analyzed for their composition and morphological transformations
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