Abstract
Numerical calculation of {111}〈110〉 slip activity in silicon web crystals generated by thermal stresses is in good agreement with etch pit patterns and X-ray topographic data. The data suggest that stress redistribution effects are small and that a model, similar to that proposed by Penning and Jordan but modified to account for dislocation annihilation and egress, can be used to describe plastic flow effects during silicon web growth.
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