Abstract
The plasma-elastic component of the photoacoustic response in the time-domain of thin semiconductor samples excited by long electromagnetic radiation pulses is analyzed in detail. The plasma-elastic component model assumes that ambipolar diffusion can be approximated by the minority carrier diffusion. The results obtained show that the plasma-elastic component in thin semiconductor samples affects photoacoustic measurements in the time domain, which is important for the photoacoustic determination of semiconductor electronic properties.
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