Abstract
Piezoresistance in n-type β-SiC was analyzed on the basis of electron transfer and mobility shift mechanisms for cubic many-valley semiconductors. Gauge factors were calculated by using shear deformation potential constant Ⅺu. The calculation was compared with experimental results taken from the literature. It was shown that incorporation of the electron transfer and the mobility shift mechanisms gives reasonable interpretation for piezoresistance in n-type β-SiC within the temperature range from 300 to 673 K, and impurity concentration range from 1018 to 1020 cm−3. These conditions correspond to typical operation ranges of high-temperature piezoresistive sensors. The effect of the intervalley scattering on piezoresistance can be neglected from the evidence that gauge factor is inversely proportional to temperature within the abovementioned conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
