Abstract
With account of previous analysis of optoelectronic technologies for on - board systems experimental investigation results are presented for a number of structures (monocrystalline silicon, silicon on sapphire (SOS) structures, CdSe/SiO<sub>2</sub>/Si, GaN and InGaN on sapphire) illustrating the integrated optoelectronics possibilities for future very large-scale optoelectronic integrated circuirs realization. Data are presented for luminescence and photosensitivity characteristics of devices based on above-mentioned structures. Experimental results on electro - optic conversion characteristics in emitter - photodetector geometry are presented for silicon and sapphire substrate based devices. Different electroluminescence mechanisms in both forward and reverse biased mode with thermalized and hot carriers have been studied. It's shown that noticeable output signal can be obtained even using SOS - emitters. It's emphasized that the greatest potential for future integrated optoelectronics have sapphire substrate based devices. Physical and technological aspects of monolithic devices are considered including spectral characteristics, efficiency, resolution, cross stalk and pixel size limitations, low - current operation mode.
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