Abstract
The low temperature (5 K) photoluminescence (PL) of silicon substrate in the range of 0.8–1.12 eV before and after microwave plasma assisted chemical vapor deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure ( ρ ∼3 kOhm cm) dislocation-free silicon treated by mechanical polishing (MP) or by superior chemical–mechanical polishing (CMP). In the PL spectra of coated silicon substrates treated by CMP, the D 1 and D 2 lines related to the dislocation emission were registered. We suppose that the formation of dislocations in the substrate is caused by a strong adhesion of diamond film and as a consequence by the formation of inner tensions released as dislocations.
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