Abstract
Rigorous computer analysis of the band-edge PL efficiency (IPL/Φ) and the effective surface recombination velocity (Seff) was performed for n-Al0.33Ga0.67As surfaces versus the surface state density, NSS0, in a wide range of photon flux density, Φ (from 1012 to 1025 cm−2 s−1). The behavior of electron (EFn) and hole (EFp) quasi-Fermi levels was also studied. In addition, the simulated IPL/Φ–Φ dependencies have been compared with experimental data for MBE-grown AlGaAs wafers passivated by ultrathin Si interface control layer.
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