Abstract
AbstractA detailed analysis of photoinduced current transients of differntly grown CdTe:Cl samples was performed in the 100–130 K range in order to investigate the influence of the different growth techniques (sublimation, Bridgman method and travelling heater method (THM)) on the compensation defects. The transients were evaluated using a regularisation method (fast Tikhonov regularisation) as implimented in the program FTIKREG. The advantages of the regularisation method in comparison with the customary two‐gate technique are demonstrated by the analysis of simulated data. It can be shown that the different growth techniques have only one level in common. Furthermore, the superposition of different traps can lead to wrong results using the conventional two‐gate technigque. The temperature dependence of the relaxation times is evaluated and the corresponding trap parameters are determined.
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