Abstract
Photo-induced changes in the performance of a-SiC:H/a-Si:H (where a-SiC:H and a-Si:H denote hydrogenated amorphous SiC and silicon) heterojunction solar cells were investigated under illuminations of 1 sun and 10 suns. The fill factor and the conversion efficiency decreased sharply with time under 10 suns illumination. In order to separate the origin of the photo-induced fill factor change from thermal effects on the fill factor, the temperature dependence and heat-treatment-induced recovery of the cell performance were also studied. With these systematic data, a series of experimental and theoretical analyses were carried out using the variable minority carrier transport model. The results show that the photo-induced changes are caused not only by the bulk Staebler-Wronski effect but also by changes in the surface recombination factor.
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