Analysis of pentacene field effect transistor as a Maxwell-Wagner effect element

Abstract

The pentacene field effect transistor (FET) is analyzed as a Maxwell-Wagner effect element. As a result of the Maxwell-Wagner effect, carriers injected from source electrode are accumulated at the interface between pentacene and SiO2-gate insulator. They are then conveyed along the FET channel by the electric field formed between source and drain electrodes. The drain current Ids shows characteristic behavior depending on the force of the electric field. The transit time and charging time of injected carriers are key parameters to specify FET characteristics ruled by the Maxwell-Wagner effect. Results also show that our pentacene FET characteristics are well explained based on the present theoretical analysis.