Abstract
Total ionizing dose (TID) radiation effects in the Bipolar Voltage Comparator LM139 with different biases and total dose were investigated by circuit simulation. The parameters of offset voltage and low level output voltage VOL was simulated through a method of circuit simulation with Multisim. Simulation results show that Dominated by the current gain degradation of differential PNP transistors and other NPN transistors, the shifts of offset voltage characteristics were significantly affected. Furthermore, as the total dose continues increase, the low level output voltage VOL increase significantly because the current gain of the output transistor degrade after irradiation.
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