Analysis of Off�]state Leakage Currents in Poly-Si FinTFTs with Wide Drain by Microwave Annealing

Hsin-Hui Hu,Kun-Ming Chen,Yao-Jen Lee,Chun-Lin Huang

doi:10.18494/sam.2020.2597

Abstract

Analysis of Off�]state Leakage Currents in Poly-Si FinTFTs with Wide Drain by Microwave Annealing

Highlights

Gate-induced drain leakage (GIDL) is the major component of the off-state leakage current in fin-like field-effect transistors (FinFETs) and increases standby power dissipation.[1,2] In a three-dimensional (3D) structure such as a FinFET, the transverse band-toband (T-BTBT) tunneling in the gate-to-drain overlap region can be suppressed by reducing the transverse electric field, the band overlap between the valence band of the body and the conduction band of the drain region enables substantial longitudinal band-to-band tunneling (L-BTBT) in the OFF state.[3]
The metal field plate is connected to the gate electrode as a gate field plate (GFP) and the drift region is undoped, which helps to improve the breakdown voltage by spreading the depletion region at the surface and lowering the electric field
For a small LEX (= 0 and 0.8 mm), the dependence of leakage current on temperature is less sensitive, which indicates that the BTBT is dominant

Summary

Introduction

Gate-induced drain leakage (GIDL) is the major component of the off-state leakage current in fin-like field-effect transistors (FinFETs) and increases standby power dissipation.[1,2] In a three-dimensional (3D) structure such as a FinFET, the transverse band-toband (T-BTBT) tunneling in the gate-to-drain overlap region can be suppressed by reducing the transverse electric field, the band overlap between the valence band of the body and the conduction band of the drain region enables substantial longitudinal band-to-band tunneling (L-BTBT) in the OFF state.[3]. Polycrystalline silicon fin-like thin-film transistors ((poly-Si FinTFTs) with a wide drain structures were simulated.[9] Extending the wide drain can effectively suppress the longitudinal electric field near the drain and improve L-BTBT. Because of their electron mobility being higher than that of amorphous silicon (a-Si), poly-Si TFTs exhibit a high carrier mobility and a fast transient response and a high current-driving capability, which are suitable for system-on-panel (SoP) or system-on-glass (SoG) applications.

Methods

Results

Conclusion