Abstract
The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π-bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π-bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.
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