Abstract
A p-type very-narrow-quantum-well infrared photodetector is proposed and studied in this letter. Direct transitions between extended-state heavy-hole-like subbands and bound-state light-hole-like subbands are utilized. A first-principles k⋅p calculation of normal-incident absorption is performed with no adjustable parameter. Despite quantum wells only 17 Å wide, integrated absorption is found to be stronger in the proposed structure (at T=77 K, from λ=8 μm to λ=10 μm) than in a conventional p-type quantum-well infrared photodetector with the same cutoff wavelength. The integrated responsivity is estimated to be more than twice as high, while the integrated shot-noise-limited detectivity can be improved by a factor of 2. The proposed structure may also be implemented as a two-color photodetector.
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