Abstract
Computational and experimental studies of the characteristics of a high-power AlGaAs/InGaAs/GaAs DpHEMT were performed. A self-consistent numerical solution of the Schrodinger and Poisson equations was used to calculate the band diagram and the electron concentration in the channel of the transistor under study. The electron mobility in the transistor channel was estimated experimentally at 9300 cm2/V·s. The obtained transfer current--voltage characteristic of the transistor was used to calculate the parameters of a model differential amplifier (small-signal gain and third-order non-linear distortion factor). Keywords: AlGaAs/InGaAs/GaAs DpHEMT, nonlinear distortion, spacer layers.
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