Analysis of Noise Figure of GaN HEMT at High Frequency Range for Microwave Applications

Abstract

Microwave and Millimeter Wave Integrated Circuits have experienced a tremendous growth over the last five decades. Circuits have become smaller, highly integrated, lower in cost, and have found extensive applications in radar, electronic warfare and the commercial field. MMIC approach is being used extensively these days where silicon technology is failing with the increase demand in low cost, less power consuming, more compact electronic devices. One of the very convincing MMIC approach has been discussed here is GaN HEMT. The small signal and noise analysis has been done and the results obtained which could act as a driving factor in many microwave applications.