Analysis of new current mode sense amplifier

Abstract

Sense amplifiers are one of the most vital circuits in the margin of CMOS memories. Their performance influences both memory access time and overall memory power dissipation. The existing Current-Mode Sense Amplifier coupled with a simplified read-cycle-only memory system has the ability to quickly amplify a small differential signal on the Bit-Lines (BLs) and Data-Lines (DLs) to the full CMOS logic level without requiring a large input voltage swing. The Current-Mode Sense Amplifier has two levels of sensing schemes. This hierarchical two-level sensing scheme helps in reducing both power consumption and sensing delay imposed by the bit-lines and the data-lines on high density SRAM designs. This type of Current-Mode Sense Amplifier improves the sensing speed and reliability of the previously published designs and at the same time reduces the power consumption to a considerable extent. In order to further improve the performance of the existing current-mode sense amplifier, an efficient current-mode sense amplifier is proposed in this research. The proposed research work uses the clamped bit-line sense amplifier.