Abstract
By using ferroelectric material as gate insulator in MOSFET (NCFET), Sub-Threshold Swing can be reduced below the fundamental limit of 60mV per decade. Achieving the negative capacitance depends on the ability to drive ferro- electricity away from its local minimum to non-equilibrium state which is very unstable. It can be stabilized by adding a series capacitance. Hence, a ferroelectric capacitor in a series connection with a channel capacitor can be made to model a ferroelectric MOS capacitor to get a steeper Id-Vgs curve than a regular MOSFET.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
