Abstract
The computer simulation of double- and triple-crystal X-ray rocking curves obtained by diffraction in parallel geometry is a powerful technique to obtain information on the lattice quality of nearly perfect monocrystalline samples. The simulation, based on the dynamical model of X-ray diffraction, provides the depth profiles of the lattice deformation and the static atomic disorder. In the field of microelectronics, this method can successfully be used for the investigation of the effects of the technological processes and their relation to the device performances. A simple analysis procedure and an effective method of computer simulation of experimental rocking curves are described which allow a precise structural characterization. Examples of application on silicon are reported, such as the analysis of lattice defects produced by ion implantation and their evolution upon heat treatment, and heteroepitactic Si1-xGex thin film alloys on Si.
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