Analysis of multiband conduction in HgTe by magnetic‐field‐dependent Hall techniques

Abstract

Electrical transport in bulk samples of HgTe was studied using the recently developed mobility spectrum technique to interpret magnetic‐field‐dependent Hall measurements. Hole mobilities in excess of 105 cm2/V s were observed in pure samples at 4–16 K. In more highly doped samples, four types of carriers were observed: high‐mobility electrons (≊105 cm2/V s), high‐mobility holes (≊104 cm2/V s), and low‐mobility electrons and holes (≊103 cm2/V s). The physical implications of the results are discussed.