Abstract

In recent years, statistical methods of multivariate analysis have been successfully applied to Auger electron spectroscopy (AES). Factor Analysis (FA), for instance, has been applied both to provide chemical state information (not commonly obtainable by AES) and to improve the sensitivity of the technique. Up to now, however, in what concerns in-depth investigation, the application of FA was restricted to conventional depth profiling. In this work, FA was applied to Auger Crater Edge Profiling of multi-layered structures. Taking a PdPd 2SiaSi:H system for example, an improvement by a factor 2 in relative depth resolution in comparison to the conventional method was obtained. Apart from this, chemical state information was obtained, especially at the interface regions. The method was also applied to other structures, providing similar results.

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