Abstract
Structural disorder at the interface of molecular-beam epitaxially grown ZnSe layers on GaAs and GaP substrates has been investigated by means of the Rutherford backscattering channeling technique. For ZnSe layers grown on GaAs substrates, for which the lattice mismatch is only about 0.25%, high-quality ZnSe layers were obtained independent of the layer thickness with little increase in the minimum yield χmin at the interface. For ZnSe layers grown on GaP substrates, for which the lattice mismatch is about 4%, a disordered layer was found in the vicinity of the interface. The crystalline quality for ZnSe grown on GaP substrate was found to depend on the layer thickness; at a sufficiently great layer thickness, the crystallinity is comparable to the layers grown on GaAs substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
