Analysis of Modal Gain in Tin-Incorporated Group-IV Alloys Based Multiple Quantum Well Transistor Laser

Ravi Ranjan,Prakash Pareek,Mukul K Das

doi:10.1007/978-981-15-9259-1_162

Analysis of Modal Gain in Tin-Incorporated Group-IV Alloys Based Multiple Quantum Well Transistor Laser

Ravi Ranjan, Prakash Pareek + Show 1 more

https://doi.org/10.1007/978-981-15-9259-1_162

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Publication Date: Jan 1, 2021

Affiliation: Darbhanga Medical College and Hospital, National Institute of Technology Warangal

#Number Of Quantum Well #Optical Modal Gain + Show 8 more

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Abstract

In this work, a theoretical model developed for the Ge-Si0.12Ge0.73Sn0.15/Si0.11Ge0.73Sn0.16 n-p-n mid-infrared transistor laser (TL) with strain-balanced Ge0.85Sn0.15 multiple quantum well (QW) in the base. The variation of optical confinement factor and modal gain for different number of QWs is also calculated. The result shows that overall optical confinement factor and modal gain increase with the number of QW.

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