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Abstract
We have developed a Raman simulation method using a finite-difference time-domain electromagnetic simulation and a finite element method stress simulation for precise local stress analysis of Si devices. This method accounts for the modification of light distribution by the sample structure, which significantly affects the Raman spectra near a metal gate structure with high refractive index and extinction coefficient. The precise stress estimation by this method is verified by analyzing polarized UV Raman measurements of a metal-oxide semiconductor field-effect transistor structure with a metal gate.
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