Abstract
Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon–oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amorphous. The film prepared at oxygen/argon flow rate ratio > 0.05 developed large crystallites of boric acid in localize areas of amorphous boron oxide matrices. These crystallites were unstable and at electron microscopic analysis they continuously transformed to a cubic HBO 2 phase and then completely vanished leaving an underlying amorphous boron oxide film behind. The analyses indicate the coexistence of B 6O, HBO 2 crystallites and amorphous boron oxide matrices. Fourier transform infrared (FTIR) spectra revealed spectral bands of BOH, BO, BOB and BH groups. Nanohardness and elastic modulus of a film prepared at low oxygen concentration approach 30 and 300 GPa, respectively. These parameters however vary with deposition conditions.
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