Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

Y Xu,R Coppard,K Tsukagoshi,F Balestra,J.A Chroboczek,G Ghibaudo,R Gwoziecki,T Minari

doi:10.1109/icnf.2011.5994384

Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

Y Xu, R Coppard + Show 6 more

https://doi.org/10.1109/icnf.2011.5994384

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Publication Date: Jun 1, 2011

Citations: 7

Affiliation: Institut de Microélectronique, Electromagnétisme et Photonique, Micro and Nanotechnology Innovation Centre, Université Grenoble Alpes, Grenoble Institute of Technology, CEA LITEN, CEA Grenoble, Atomic Energy and Alternative Energies Commission

#Organic Transistors #Electrical Properties Of Organic Transistors + Show 8 more

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Abstract

A study of electrical properties of organic transistors combining static and noise data is presented. The DC data provide key parameters, such as mobility, contact resistance and the surface state density. The low-frequency noise analysis proves that the features observed in DC measurements, e.g. higher trap density, reflect poor crystal quality and thus are responsible for lower mobility and higher contact resistance. The mobility and contact resistance data provide a deep insight into the origin of the contact noise in organic transistors.

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