Analysis of location and LET dependence of single event transient in 14 nm SOI FinFET

Abstract

FinFET, with narrow silicon fin, and high k/metal gate stacked combined with SOI technology brings benefits to radiation effects. Single event transient (SET) of SOI FinFET at 14 nm technology node is simulated by TCAD. The device model is calibrated by the experiment data. The effects of ion strike locations and linear energy transfer (LET) on SET are analyzed. The trends of the transient current peak, the collected charge, the deposited charge and the bipolar amplification are discussed. The results indicate that the most sensitive area of FinFET to SET is the gate-drain junction of fin. With LET increasing, the transient current peak and the collected charge increase while the bipolar amplification decreases.