Abstract
This work presents an analysis on the performance of lateral thin-film SOI PIN diodes for the detection of short wavelengths, in the range of blue and ultra-violet (UV) wavelengths, as a function of the temperature, reaching the cryogenic regime. Measurements performed for temperatures ranging from 100 K to 400 K showed that the optical responsitivity of these photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations were performed showing the same trends as the experimental data, and were used to predict the influence of silicon film thickness downscaling on the photodetector performance.
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