Abstract
Latchup-induced photon emission from CMOS devices is studied and compared with photon emission from hot carriers. Experiments revealed fundamental differences in spectral characteristics. By exploiting these differences, latchup sites are identified and depicted in high resolution. An effective method of separating photon emission patterns by passing through bandpass optical filters is described. It is shown that the photon emission mechanism from latchup is phonon-assisted electron-hole recombination.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
