Abstract
In this paper, a comprehensive analytical model is developed for intrinsic capacitances in multi-barrier Enhancement-Mode Metal-Insulator-Semiconductor-High-Electron-Mobility-Transistors (MISHEMTs) by developing two-dimensional electron-gas (2DEG) density model and analysed with Technology Computer-Aided Design (TCAD) simulations. The 2DEG is formed and calculated at the heterointerface state of AlInN/GaN triangular quantum well lower sub-bands. The self-consistent solution’s of Pӧissӧn’s and Schrӧdinger’s equations are derived to estimate the behaviour of gate charge and then by intrinsic capacitance. This analysis focuses on the modelling of an accurate analytical model to estimate the intrinsic capacitances behaviour, considering the intricacies introduced by multi-barrier structures, device dimensions and applied voltages. TCAD simulations are used to validate the analytical models and provide insights into the characteristics of capacitance under various operating conditions. These results reveal significant interfaces among the structural parameters and the intrinsic capacitances, presents an understanding of the device physics and supporting in the optimization of MISHEMTs for high-performance applications..
Published Version
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