Abstract
TiO2 films have been deposited at a low temperature (∼150 °C) using titanium tetrakis isopropoxide (TTIP) as an organometallic precursor on Si0.3Ge0.7 heterolayers by a microwave plasma-enhanced chemical vapour deposition system. Interfacial properties of the as-deposited films have been characterized using capacitance–voltage and conductance–voltage techniques measured at different frequencies. The energy distribution of interface states and the relaxation time have been determined from Gp/ω versus ω analysis. A Dit level of Al/TiO2/SiGe MIS capacitors in the range of 2.87 × 1011 eV−1 cm−2 (in EC-0.446) eV to 5.04 × 1011 eV−1 cm−2 (in EC-0.696) eV has been observed from conductance measurements.
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