Abstract
The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I–V) and capacitance-voltage (C–V) measurements. The measured C–V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I–V characteristics were found to vary from 1.72 × 1013 eV−1cm−2 at EC-0.32 eV to 1.68 × 1012 eV−1cm−2 at EC-0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (RS - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.
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