Abstract
This paper reports on the extreme sample bias shift (ESBS) method for the analysis of insulating specimens in SIMS. The change of surface potential on the specimen caused by charge buildup was effectively compensated by providing the extremely high sample bias in case of oxygen negative primary ion bombardment and positive secondary ion detection. We precisely studied the influence of the analytical point on the sample upon the secondary ion intensities and energy distributions. Furthermore, spectral interference and reproducibility of secondary ion intensity ratios were discussed for quantitive analysis. It was found that at the center of the sample, the maximum and stable secondary ion intensities were obtained and a 90 V offset of the sample bias offered the reasonable compromise between analytical sensitivity and reproducibility with the effective suppression of spectral interference. The ESBS method allows the high sensitive analysis of insulating specimens without both any special sample pretreatment and costly modification of the SIMS instrument.
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