Abstract
In this paper, 5,6,11,12-tetraphenylnaphthacene (rubrene) was prepared on n type GaAs (100) substrate by spin coating. The device parameters of Al/rubrene/n-GaAs (100) Schottky diode have been investigated by means of current–voltage (I–V) characteristics in the temperature range 100–300K by steps of 50K and capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics at 1MHz and 300K. It was observed that ideality factors increased and barrier heights decreased with the decreasing temperature. The observed anomaly of temperature dependence of Schottky barrier height and ideality factor are explained by Gaussian distribution of Schottky barrier height in the same temperature ranges. Al/rubrene/n-GaAs Schottky barrier diode has been shown to have a Gaussian distribution with mean barrier height (Φ¯B) of 1.076eV and standard deviation (σs) of 0.119V. Schottky barrier height (ΦB), series resistance (Rs), and the density of interface trap states (Ns s) of the diode were calculated as 1.004eV, 1.18k Ω and 2.145×1011eV−1cm−2 for 1MHz, respectively.
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