Abstract
InGaN high-brightness light-emitting diodes (LEDs) have been analyzed. The analysis, based on non-absorbing ohmic electrode model, shows that InGaN LEDs have an extremely wide escape cone solid angle which is about 2.8 times that in conventional high-brightness LEDs. As a result, the external quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.
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