Abstract
Pseudomorphic InGaAs/GaAs quantum wells (QWs) were grown by molecular beam epitaxy (MBE) under various growth conditions. Surface segregation of indium atoms during MBE growth influenced the QW structures, and the evidence was measured by a secondary ion mass spectroscopy and a low temperature photoluminescence. Calculated results based on a kinetic model of the surface segregation were compared with experimental ones. It was found that the change of InGaAs/GaAs heterointerface due to the surface segregation can be almost predicted by a kinetic model, and a segregation energy could be estimated.
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