Abstract
In this work, a fast identification of I ddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the I ddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results.
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