Abstract
4He +-H elastic recoil detection is used to profile hydrogen distributions in semi-insulating polysilicon films (SIPOS). The relation between hydrogen content and reactant gas flow ratio r, and the hydrogen release from SIPOS after annealing were measured. The experimental results show that the hydrogen content is much less than the oxygen content in SIPOS films and rapidly decreases after annealing. The relation between hydrogen content and oxygen content, and the hydrogen incorporation with oxygen in SIPOS film were also discussed.
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