Abstract
The hydrogen concentration of diamond layers produced by a low pressure chemical vapour deposition method on SiAlON substrates has been determined by means of the 15N nuclear reaction analysis technique. The results show distinct differences in the hydrogen content which depend on the gas pressure and on the acetone-hydrogen gas mixture used in the deposition. The resulting diamond morphology is found to be related to the hydrogen content, well-faceted layers containing about 0.2–0.9 at % H, and balas-type layers with about 1.4 at.%H. Contrary to expection, no relation between the crystal size in the well-faceted layers and the average hydrogen content was found. Additional Rutherford backscattering measurements revealed a high purity of the films with respect to elements heavier than carbon.
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